STGWT20H65FB
Trans IGBT Chip N-CH 650V 40A 3-Pin TO-3P Tube
- RoHS 10 Compliant
- Tariff Charges
These device is IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead free package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.55 | ||
| 650 | ||
| 40 | ||
| 3 | ||
| 175 °C | ||
| 168 | ||
| HB Series | ||
| TO-3P | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |