STGWA80H65FB
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
- RoHS 10 Compliant
- Tariff Charges
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Technical Attributes
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| Description | Value | |
|---|---|---|
| 1.6 | ||
| 650 | ||
| 120 | ||
| 3 | ||
| 175 °C | ||
| 469 | ||
| HB Series | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290080 |