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STGW60H65DFB

Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

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STGW60H65DFB
  • STGW60H65DFB
Manufacturer:STMicroelectronics
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGW60H65DFB
Secondary Manufacturer Part#: STGW60H65DFB
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

These are IGBT devices developed using anadvanced proprietary trench gate and field-stopstructure. The devices are part of the new HBseries of IGBTs, which represent an optimumcompromise between conduction and switchinglosses to maximize the efficiency of anyfrequency converter. Furthermore, a slightlypositive VCE(sat) temperature coefficient and verytight parameter distribution result in saferparalleling operation.

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.6 V (typ.) @ IC= 60 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1.6
    		650
    		80
    		3
    		175 °C
    		375
    		HB Series
    		TO-247
    		Through Hole

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290095
    Schedule B: 8541290080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 98 Weeks
    Price for: Each
    Quantity:
    Min:600  Mult:600  
    USD $:
    600+
    $2.14829
    1200+
    $2.03216
    2400+
    $1.97868
    3600+
    $1.92795
    4800+
    $1.87975