STGW30M65DF2
Transistor I GBT N-CH 650V 60A 3-Pin TO-247 Tube
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![STGW30M65DF2]()
Manufacturer:STMicroelectronics
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGW30M65DF2
Secondary Manufacturer Part#: STGW30M65DF2
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RoHS 10 Compliant -
Tariff Charges
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- 6 µs of short-circuit withstand time
- VCE(sat): 1.55 V (typ.) @ IC: 30 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Package: TO-247
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.55 | ||
| 650 | ||
| 60 | ||
| 3 | ||
| 175 °C | ||
| 258 | ||
| M Series | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: