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STGW25M120DF3

IGBT, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 Pins

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STGW25M120DF3
  • STGW25M120DF3
Manufacturer:STMicroelectronics
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGW25M120DF3
Secondary Manufacturer Part#: STGW25M120DF3
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • 10 µs of short-circuit withstand time
  • VCE(sat)= 1.85 V (typ.) @ IC= 25 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and fast recovery antiparallel diode

    • Technical Attributes

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    		 Description Value
    		1.85
    		1.2
    		50
    		3
    		175 °C
    		375
    		M Series
    		TO-247
    		Through Hole

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290040
    Schedule B: 8541290080
    In Stock :  1200.0
    Ships in 1 bus. day
    Additional inventory
    Factory Lead Time: 98 Weeks
    Price for: Each
    Quantity:
    Min:600  Mult:1  
    USD $:
    600+
    $2.41329
    1200+
    $2.39811
    2400+
    $2.3537
    4800+
    $2.31091
    9600+
    $2.28768