STGD10HF60KD
Trans IGBT Chip N-CH 600V 18A 3-Pin DPAK T/R
- RoHS 10 Compliant
- Tariff Charges
This device utilizes the advanced PowerMESH process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.5 | ||
| 600 | ||
| 18 | ||
| 3 | ||
| 175 °C | ||
| 62.5 | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |