STGB6M65DF2
STMSTGB6M65DF2
Manufacturer:STMicroelectronics
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGB6M65DF2
Secondary Manufacturer Part#: STGB6M65DF2
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RoHS 10 Compliant -
Tariff Charges
IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
- 6 µs of short-circuit withstand time
- VCE(sat): 1.55 V (typ.) @ IC = 6 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.55 | ||
| 650 | ||
| 12 | ||
| 175 °C | ||
| 88 | ||
| M Series | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
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