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STGB30V60DF

Trans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R

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STGB30V60DF
  • STGB30V60DF
Manufacturer:STMicroelectronics
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGB30V60DF
Secondary Manufacturer Part#: STGB30V60DF
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • Maximum junction temperature: TJ= 175 °C
  • Tail-less switching off
  • VCE(sat)= 1.85 V (typ.) @ IC= 30 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1.85
    		600
    		60
    		3
    		175 °C
    		258
    		V Series
    		TO-263 (D2PAK)
    		Surface Mount

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290040
    Schedule B: 8541290080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 105 Weeks
    Price for: Each
    Quantity:
    Min:1000  Mult:1000  
    USD $:
    1000+
    $1.13665
    2000+
    $1.08981
    4000+
    $1.06963
    8000+
    $1.05018
    16000+
    $1.03968