STF27N60M2-EP
IGBTs
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Manufacturer:STMicroelectronics
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STF27N60M2-EP
Secondary Manufacturer Part#: STF27N60M2-EP
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RoHS 10 Compliant -
Tariff Charges
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.5 | ||
| 600 | ||
| 10 | ||
| 175 °C | ||
| 24 | ||
| H Series | ||
| TO-220FP | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: