STD100N10F7
Power MOSFET, N Channel, 100 V, 80 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
- RoHS 10 Compliant
- Tariff Charges
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET technology,with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Suitable for switching applications
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 80 | ||
| 8 | ||
| 100 | ||
| 4.5 | ||
| 3 | ||
| 175 °C | ||
| 120 | ||
| TO-252 type A2 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290080 |