SCT027H65G3AG

SCT027H65G3AG is an automotive-grade silicon carbide power MOSFET. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Typical applications include main inverter (electric traction), DC/DC converter for EV/HEV and on-board charger (OBC).

• Very low RDS(on) over the entire temperature range
• AEC-Q101 qualified
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
• 650V (Vds) drain to source voltage
• 29mohm RDS(on) typ
• 60A (ID) drain current