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PD85035S-E

Transistor RF FET N-CH 40V 8A 870MHz 3-Pin PowerSO-10RF Tube

Manufacturer:STMicroelectronics
Product Category: Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: PD85035S-E
Secondary Manufacturer Part#: PD85035S-E
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio.The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

  • Excellent thermal stability
  • Common source configuration
  • POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC1 European directive
  • Technical Attributes

    Find Similar Parts

    Description Value
    N Channel
    8
    40
    3
    870
    870
    165 °C
    95
    PowerSO-10RF
    Surface Mount

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290075
    Schedule B: 8541290040
    In Stock :  0
    Additional inventory
    Factory Lead Time: 161 Weeks
    Price for: Each
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    $24.59688
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