PD57070S-E
Transistor RF FET N-CH 65V 7A 945MHz 3-Pin PowerSO-10RF Tube
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RoHS 10 Compliant -
Tariff Charges
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 7 | ||
| 65 | ||
| 3 | ||
| 1 | ||
| 900 | ||
| 165 °C | ||
| 95 | ||
| PowerSO-10RF | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290040 |
Factory Lead Time: