PD57002S-E
Transistor RF FET N-CH 65V 0.25A 960MHz 3-Pin PowerSO-10RF Tube
Manufacturer:STMicroelectronics
Product Category:
Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: PD57002S-E
Secondary Manufacturer Part#: PD57002S-E
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RoHS 10 Compliant -
Tariff Charges
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 5 | ||
| 65 | ||
| 3 | ||
| 1 | ||
| 925 | ||
| 165 °C | ||
| 73 | ||
| PowerSO-10RF | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: