PD54003-E
Transistor RF FET N-CH 25V 4A 500MHz 3-Pin PowerSO-10RF Tube
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RoHS 10 Compliant -
Tariff Charges
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 4 | ||
| 25 | ||
| 3 | ||
| 1 | ||
| 480 | ||
| 165 °C | ||
| 52.8 | ||
| PowerSO-10RF | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290040 |
Factory Lead Time: