MASTERGAN3TR
MOSFET and Power Driver 12A 4-OUT Hi/Lo Side Non-Inv 31-Pin QFN T/R
- RoHS 10 Compliant
- Tariff Charges
MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half-bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225mohm and 4
- Reverse current capability
- Zero reverse recovery loss
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Over temperature protection
- Bill of material reduction
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 70 ns | ||
| 3.3V to 15V | ||
| Gold Over Nickel Palladium | ||
| 260 °C | ||
| 9.5 V | ||
| 70 ns | ||
| 70 ns | ||
| 70 ns | ||
| 4.75 V | ||
| Surface Mount | ||
| 3 | ||
| 2 | ||
| 31 | ||
| 2 | ||
| 4 | ||
| 0.8 mA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 70 ns | ||
| 450 mOhm | ||
| 31QFN | ||
| 12 A | ||
| 31 | ||
| 9 x 9 x 0.9 mm | ||
| MasterGaN | ||
| No | ||
| Extended Industrial | ||
| 40 mA | ||
| QFN | ||
| 9.5 V | ||
| 4.75 V | ||
| 6 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 9023000000 |
| Schedule B: | 9023000000 |