MASTERGAN1
MOSFET and Power Driver 10A Single Hi/Lo Side Non-Inverting 31-Pin QFN Tray
- RoHS 10 Compliant
- Tariff Charges
MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half-bridge configuration. The integrated power GaNs have RDS(ON) of 150 m? and 650 V drain-source breakdown voltage, while the high si
- Reverse current capability
- Zero reverse recovery loss
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature prot
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 70 ns | ||
| 3.3V to 15V | ||
| Gold over Nickel Palladium | ||
| 260 °C | ||
| 9.5 V | ||
| 70 ns | ||
| 70 ns | ||
| 70 ns | ||
| 4.75 V | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 31 | ||
| 1 | ||
| 1 | ||
| 680 uA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 70 ns | ||
| 150 mOhm | ||
| 31QFN | ||
| 10 A | ||
| 31 | ||
| 9 x 9 x 0.85 mm | ||
| No | ||
| Extended Industrial | ||
| QFN | ||
| 9.5 V | ||
| 4.75 V | ||
| 6 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 9023000000 |
| Schedule B: | 9023000000 |