L6491D
MOSFET DRVR 4A 1-OUT Inv/Non-Inv 14-Pin SOIC Tube
- RoHS 10 Compliant
- Tariff Charges
The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| 85 ns | ||
| 3.3V|5V|CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Gold over Nickel Palladium | ||
| 260 | ||
| 40 ns | ||
| 40 ns | ||
| 120 ns | ||
| 120 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 1 | ||
| 800 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 85 ns | ||
| 175 Ohm | ||
| 14SOIC | ||
| 4 A | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 8.75(Max) x 4(Max) x 1.5(Max) | ||
| No | ||
| Extended Industrial | ||
| 4 A | ||
| 4 A | ||
| SOIC | ||
| 20 V | ||
| 10 V | ||
| 15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |