L6395DTR
MOSFET DRVR 0.43A 2-OUT Hi/Lo Side Non-Inv 8-Pin SO T/R
- RoHS 10 Compliant
- Tariff Charges
L6395DTR is a high voltage and low-side driver. It is manufactured with the BCD™ offline technology. It is a single chip high and low-side gate driver for N-channel power MOSFETs or IGBTs. The high-side (floating) section is designed to stand a voltage up
- dV/dt immunity ± 50V/ns in full temperature range
- Driver current capability is 290mA for source and 430mA for sink
- Switching times 75/35ns rise/fall with 1nF load
- Integrated bootstrap diode, case style is SO-8
- Compa
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 125 ns | ||
| 3.3V|5V|CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| 70 ns | ||
| 200 ns | ||
| 120 ns | ||
| Surface Mount | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 800 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 125 ns | ||
| 8SO | ||
| 0.43 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 4.9 x 3.9 x 1.5(Max) | ||
| No | ||
| 600 V | ||
| Extended Industrial | ||
| 430 mA | ||
| 290 mA | ||
| SOIC | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |