L6391D
MOSFET DRVR 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC Tube
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Manufacturer:STMicroelectronics
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: L6391D
Secondary Manufacturer Part#: L6391D
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RoHS 10 Compliant -
Tariff Charges
The L6391 is a high voltage device manufactured with the BCD“OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.An integrated comparator is available for protections against overcurrent, overtemperature, etc.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Inverting|Non-Inverting | ||
| High and Low Side | ||
| 125 ns | ||
| 3.3V|5V|CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Gold | ||
| 260 | ||
| 70 ns | ||
| 200 ns | ||
| 120 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 14 | ||
| 2 | ||
| 2 | ||
| 800 kHz | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 125 ns | ||
| 14SOIC | ||
| 14 | ||
| IGBT, MOSFET, Mosfet | ||
| 8.75 x 4 x 1.65 mm | ||
| No | ||
| 430 mA | ||
| 290 mA | ||
| SOIC | ||
| 20 V | ||
| 12.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: