L6388ED
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SO N Tube
-
RoHS 10 Compliant -
Tariff Charges
The L6388ED is a high voltage low-side Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can sink and source 650 and 400mA respectively and cannot be simultaneously driven high integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead-time function. This device has two input and two output pins and guarantees the outputs switch in phase with inputs. The bootstrap diode is integrated in the driver allowing a more compact and reliable solution. The device features the UVLO protection on both supply voltages (VCC and VBOOT) ensuring greater protection against voltage drops on the supply lines.
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Internal bootstrap diode
- Outputs in phase with inputs
- Dead-time and interlocking function
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 225 ns | ||
| CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Gold | ||
| 260 | ||
| 80 ns | ||
| 300 ns | ||
| 100 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 400 kHz | ||
| -45 to 125 °C | ||
| 125 °C | ||
| -45 °C | ||
| 160 ns | ||
| 8SO N | ||
| 0.65 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.65 mm | ||
| No | ||
| 600 V | ||
| 650 mA | ||
| 400 mA | ||
| SOIC N | ||
| 17 V | ||
| 9.6 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: