L6387ED013TR
IGBT/MOSFET Driver, 2 Channels, High Side and Low Side, 650 mA, 17 V, 105 ns, 8 Pins, SOIC
- RoHS 10 Compliant
- Tariff Charges
The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOS or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.
Technical Attributes
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| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| High and Low Side | ||
| 110 ns | ||
| CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Gold | ||
| 260 | ||
| 30 ns | ||
| 110 ns | ||
| 50 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 400 kHz | ||
| -45 to 125 °C | ||
| 125 °C | ||
| -45 °C | ||
| 105 ns | ||
| 8SO N | ||
| 0.65 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.65 mm | ||
| No | ||
| 600 V | ||
| 650 mA | ||
| 400 mA | ||
| SOIC N | ||
| 17 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |