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L6384

MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin Mini-PDIP

Manufacturer:STMicroelectronics
Avnet Manufacturer Part #: L6384
Secondary Manufacturer Part#: L6384
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The L6384E is a high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOS or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the deadtime function, tunable by the user through an external resistor connected to the DT/SD pin.The L6384E device has one input pin, one enable pin (DT/SD) and two output pins, and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.The L6384E features the UVLO protection and a voltage clamp on the VCCsupply voltage. The voltage clamp is typically around 15.6 V and is useful in order to ensure a correct device functioning in cases where VCCsupply voltage is ramped up too slowly or is subject to voltage drops.The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability
  • 400 mA source
  • 650 mA sink
  • Switching times 50/30 nsec rise/fall with 1 nF load
  • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
  • Shutdown input
  • Deadtime setting
  • Undervoltage lockout
  • Integrated bootstrap diode
  • Clamping on VCC
  • Available in DIP-8/SO-8 packages
  • Technical Attributes

    Find Similar Parts

    Description Value
    Half Bridge
    Inverting|Non-Inverting
    High and Low Side
    200 ns
    CMOS|TTL
    CMOS, TTL, TTL
    Matte Tin
    30 ns
    300 ns
    70 ns
    Through Hole
    2
    8
    2
    2
    400 kHz
    -40 to 125 °C
    125 °C
    -45 °C
    200 ns
    8Mini-PDIP
    0.65 A
    8
    IGBT, MOSFET, Mosfet
    10.92 x 6.6 x 3.32 mm
    No
    600 V
    650 mA
    400 mA
    Mini-DIP
    16.6 V
    14.6 V
    14.4 V

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8542330001
    Schedule B: 8542330000
    In Stock :  0
    Additional inventory
    Factory Lead Time: 777 Weeks
    Price for: Each
    Quantity:
    Min:1000  Mult:1000  
    USD $: