IRF630
Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole
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Manufacturer:STMicroelectronics
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IRF630
Secondary Manufacturer Part#: IRF630
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RoHS 10 Compliant -
Tariff Charges
The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company’s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
- Drain to source voltage (Vds) is 200V
- Gate to source voltage of ±20V
- Continuous drain current (Id) is 9A
- Power dissipation (Pd) is 75W
- Operating junction temperature range from -65°C to 150°C
- Gate threshold voltage of 3V
- Low on state resistance of 350mohm at Vgs 10V
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 9 | ||
| 400 mOhm | ||
| 200 | ||
| 4 | ||
| 3 | ||
| 150 °C | ||
| 75 | ||
| TO-220 Type A | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: