BU508AW
Bipolar (BJT) Single Transistor, NPN, 700 V, 8 A, 125 W, TO-247, Through Hole
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Manufacturer:STMicroelectronics
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: BU508AW
Secondary Manufacturer Part#: BU508AW
-
RoHS 10 Compliant -
Tariff Charges
The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- State-of-the-art technology - Diffused collector enhanced generation
- Stable performances versus operating temperature variation
- Low base-drive requirement
- Tight hFE range at operating collector current
- High ruggedness
- Well-controlled hFE parameter for increased reliability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 700 V | ||
| 8 A | ||
| 10 | ||
| 3 | ||
| 150 °C | ||
| 125 W | ||
| TO-247 | ||
| Through Hole | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290080 |
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