BD241C
Bipolar (BJT) Single Transistor, NPN, 100 V, 5 A, 40 W, TO-220, Through Hole
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RoHS 10 Compliant -
Tariff Charges
The BD241C is a high-performance NPN silicon power transistor housed in a standard TO-220 package, designed for use in switching and linear amplification circuits. With a collector-emitter voltage rating of 100V and a collector current capability of 3A, it is ideal for demanding applications requiring reliability, thermal efficiency, and durability. Engineered for general-purpose and industrial use, the BD241C offers a power dissipation of up to 65W (with proper heatsinking), making it suitable for driving relays, motors, lamps, and audio loads. Its moderate current gain (hFE) and rugged construction allow it to perform effectively in a wide range of operating environments.
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 5V)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 100 V | ||
| 5 A | ||
| 25 | ||
| 3 | ||
| 150 °C | ||
| 40 W | ||
| TO-220 | ||
| Through Hole | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: