BD239C
Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A, 30 W, TO-220, Through Hole
Click image to enlarge
Manufacturer:STMicroelectronics
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: BD239C
Secondary Manufacturer Part#: BD239C
-
RoHS 10 Compliant -
Tariff Charges
The BD239C is a 100V Silicon NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vebo = 5V)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 115 V | ||
| 2 A | ||
| 40 | ||
| 3 | ||
| 150 °C | ||
| 30 W | ||
| TO-220 | ||
| Through Hole | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: