2ST31A
Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 40 W, TO-220AB, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 V | ||
| 3 A | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 40 W | ||
| TO-220 | ||
| Through Hole | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290075 |
| Schedule B: | 8541290080 |