UCLAMP3312T.TCT

The µClamp3312T TVS diode is specifically designed to meet the performance requirements of Gigabit Ethernet interfaces. They are designed to protect sensitive PHY chips from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE).The µClamp3312T is constructed using ’s low voltage EPD process technology. The EPD process provides low operating voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes. The device features low variation in capacitance over bias for stable operation on GbE lines. This means the µClamp3312T will introduce zero traffic frame errors on GbE interfaces up to a PHY temperature of 120o C (100M Cat 5/5e Cable). The µClamp3312T also features high surge capability and is designed to be placed between the magnetic and the PHY chip. In this configuration, the device can withstand intra-building lightning surges per Telcordia GR-1089.The µClamp3312T is in a 8-pin SLP2010N8T package. It measures 2.0 x 1.0 x 0.4mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. Each device will protect two line pairs operating at 3.3 volts. It gives the designer the flexibility to protect multiple lines in applications where space is at a premium. The small size and easy layout of the uClamp3312T make it ideal for use in RJ-45 connectors with integrated magnetic.

• High ESD withstand Voltage: +/-30kV (Contact/Air)per IEC 61000-4-2
• Able to withstand over 1000 ESD strikes per IEC61000-4-2 Level 4
• Flow-through design simplifies layout
• Protects two line pairs
• Low reverse current: 10nA typical (Vr=3.3V)
• Low variation in capacitance vs. bias voltage: 1.3pF Typical (Vr = 0 to 3.3V)
• Working voltage: 3.3V
• Solid-state silicon-avalanche technology