UCLAMP2804L.TCT

The µClamp2804L TVS diode is specifically designed to meet the performance requirements of Gigabit Ethernet interfaces. They are designed to protect sensitive PHY chips from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE).The µClamp2804L is constructed using ’s low voltage EPD process technology. The EPD process provides low operating voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes. The device features low variation in capacitance over bias for stable operation on GbE lines. This means the µClamp2804L will introduce zero traffic frame errors on GbE interfaces up to a PHY temperature of 100o C (100M Cat 5/5e Cable). The µClamp2804L also features high surge capability and can be used to replace existing SLVU2.8- 4 devices in applications where the device is placed on the PHY side of the magnetic. In this configuration, the device can withstand intra-building lightning surges per Telcordia GR-1089.The µClamp2804L is in a 8-pin SOIC package. The leads are finished with lead-free matte tin. The combination of low clamping voltage, high surge capability, and low loading capacitance makes the uClamp2804L an ideal solution for protecting GbE systems to the lightning immunity requirements of GR-1089.

• High ESD withstand Voltage: +/-30kV (Contact/Air) per IEC 61000-4-2
• Able to withstand over 1000 ESD strikes per IEC 61000-4-2 Level 4
• Flow-through design simplifies layout
• Protects two line pairs
• Low reverse current: 10nA typical (Vr=2.8V)
• Low variation in capacitance vs. bias voltage: 1.3pF Typical (Vr = 0 to 2.8V)
• Working voltage: 2.8V
• Solid-state silicon-avalanche technology