UCLAMP0301PQTNT

The µClamp TVS diodes are designed for automobile applications and qualified to AEC-Q100 Grade3. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to other technologies. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE).The µClamp0301PQ is constructed using ’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon avalanche diode processes. They feature a true operating voltage of 3.0 volts for superior protection when compared to traditional pn junction devices.The µClamp0301PQ is in a 2-pin SLP1006P2 package measuring 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.0 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge) and above. The combination of small size and high ESD surge capability makes them ideal for use in automobile applications. The µClamp0301PQ is qualified to AEC-Q100 Grade 3.

• Transient protection for data lines to
  • IEC 61000-4-2 (ESD)
  • IEC 61000-4-4 (EFT)
  • Cable Discharge Event (CDE)
• Ultra-small package
• Protects one data line
• Low clamping voltage
• Working voltage: 3.0V
• Low leakage current
• Solid-state silicon-avalanche technology
• AEC-Q100 Grade 3 Qualified