SLVU2.8-8.TBT
ESD Protection Device, 17 V, SOIC, 8 Pins, 2.8 V, 8 pF, SLV
- RoHS 10 Compliant
- Tariff Charges
The SLVU2.8-8 series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed using 's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon-avalanche diode processes. The SLVU2.8-8 features integrated low capacitance compensation diodes that reduce the maximum capacitance to 8pF per line. This, combined with low leakage current, means signal integrity is preserved in high-speed applications such as 10/100 Ethernet.The SLVU2.8-8 is in an SO-8 package and may be used to protect four high-speed line pairs. The layout of the device minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the SLVU2.8-8 minimizes the stress on the protected IC.The SLVU2.8-8 series TVS diodes will meet the surge requirements of IEC 61000-4-2 (ESD), IEC61000-4-5 (Lightning), and ETSI ETS 300 386.
- 600 watts peak pulse power (tp=8/20µs)
- Transient protection for high speed data lines to
- IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
- IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
- IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
- Protects four line pairs (eight lines)
- Comprehensive pin out for easy board layout
- Low capacitance
- High peak pulse current (30A, 8/20µs)
- Low leakage current
- Low operating and clamping voltages
- Solid-state EPD TVS process technology
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100050 |
| Schedule B: | 8541100050 |