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HIP2101EIBZT

MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N EP T/R

Manufacturer:Renesas Electronics
Avnet Manufacturer Part #: HIP2101EIBZT
Secondary Manufacturer Part#: HIP2101EIBZT
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An onchip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the highside supply

  • Drives N-Channel MOSFET Half Bridge
  • SOIC, EPSOIC, QFN and DFN Package Options
  • SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
  • Pb-free Product Available (RoHS Compliant)
  • Bootstrap Supply Max Voltage to 114VDC
  • On-Chip 1O Bootstrap Diode
  • Fast Propagation Times for Multi-MHz Circuits
  • Drives 1000pF Load with Rise and Fall Times Typ. 10ns
  • TTL/CMOS Input Thresholds Increase Flexibility
  • Independent Inputs for Non-Half Bridge Topologies
  • No Start-Up Problems
  • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
  • Low Power Consumption
  • Wide Supply Range
  • Supply Undervoltage Protection
  • 3O Output Driver Resistance
  • QFN/DFN Package

Technical Attributes

Find Similar Parts

Description Value
Half Bridge
Non-Inverting
High and Low Side
25 ns
CMOS|TTL
CMOS, TTL, TTL
Matte Tin
260
600 ns
43 ns
600 ns
13 ns
13 ns
Surface Mount
MSL 2 - 1 year
2
8
2
2
-55 to 150 °C
125 °C
-40 °C
25 ns
3 Ohm
8SOIC N EP
2 A
8
MOSFET
4.98 x 3.99 x 1.55 mm
No
Industrial
2 A
2 A
SOICN EP
14 V
9 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: NO RECOVERY FEE
ECCN: EAR99
HTSN: 8542390090
Schedule B: 8542390060
In Stock :  0
Additional inventory
Factory Lead Time: 182 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $: