HIP2101EIBZT
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N EP T/R
- RoHS 10 Compliant
- Tariff Charges
The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An onchip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the highside supply
- Drives N-Channel MOSFET Half Bridge
- SOIC, EPSOIC, QFN and DFN Package Options
- SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
- Pb-free Product Available (RoHS Compliant)
- Bootstrap Supply Max Voltage to 114VDC
- On-Chip 1O Bootstrap Diode
- Fast Propagation Times for Multi-MHz Circuits
- Drives 1000pF Load with Rise and Fall Times Typ. 10ns
- TTL/CMOS Input Thresholds Increase Flexibility
- Independent Inputs for Non-Half Bridge Topologies
- No Start-Up Problems
- Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
- Low Power Consumption
- Wide Supply Range
- Supply Undervoltage Protection
- 3O Output Driver Resistance
- QFN/DFN Package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 25 ns | ||
| CMOS|TTL | ||
| CMOS, TTL, TTL | ||
| Matte Tin | ||
| 260 | ||
| 600 ns | ||
| 43 ns | ||
| 600 ns | ||
| 13 ns | ||
| 13 ns | ||
| Surface Mount | ||
| MSL 2 - 1 year | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -55 to 150 °C | ||
| 125 °C | ||
| -40 °C | ||
| 25 ns | ||
| 3 Ohm | ||
| 8SOIC N EP | ||
| 2 A | ||
| 8 | ||
| MOSFET | ||
| 4.98 x 3.99 x 1.55 mm | ||
| No | ||
| Industrial | ||
| 2 A | ||
| 2 A | ||
| SOICN EP | ||
| 14 V | ||
| 9 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390090 |
| Schedule B: | 8542390060 |