HFA3096BZ
Trans GP BJT NPN/PNP 8V 0.065A 16-Pin SOIC N
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Manufacturer:Renesas Electronics
Product Category:
Discretes, Bipolar Transistors, Bipolar Transistor Arrays
Avnet Manufacturer Part #: HFA3096BZ
Secondary Manufacturer Part#: HFA3096BZ
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RoHS 10 Compliant -
Tariff Charges
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50?) at 1GHz
- 1pA Collector to collector leakage
- Complete isolation between transistors
Technical Attributes
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| Description | Value | |
|---|---|---|
| 12 V | ||
| 12 | ||
| 65 mA | ||
| 37 | ||
| 40 | ||
| 20 | ||
| 16 | ||
| 125 °C | ||
| 150 mW | ||
| SOIC | ||
| Surface Mount | ||
| Complementary, PNP | ||
| 8 | ||
| 5.5 GHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290040 |
Factory Lead Time: