AT25DN512C-SSHF-B
Flash Serial-SPI 2.5V/3.3V 512Kbit 512K x 1bit 8-Pin SOIC N Tube
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RoHS 10 Compliant -
Tariff Charges
The Adesto AT25DN512C is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN512C, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the AT25DN512C have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. Specifically designed for use in many different systems, the AT25DN512C supports read, program, and erase operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming and erasing.
- Single 2.3V - 3.6V Supply
- Serial Peripheral Interface (SPI) Compatible
- Supports SPI Modes 0 and 3
- Supports Dual Output Read
- 104MHz Maximum Operating Frequency
- Clock-to-Output (tV) of 6ns
- Flexible, Optimized Erase Architecture for Code + Data Storage Applications
- Uniform 256-Byte Page erase
- Uniform 4-Kbyte Block Erase
- Uniform 32-Kbyte Block Erase
- Full Chip Erase
- Hardware Controlled Locking of Protected Sectors via WP Pin
- 128-Byte Programmable OTP Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
- Flexible Programming
- Byte/Page Program (1 to 256 Bytes)
- Fast Program and Erase Times
- 1.25ms Typical Page Program (256 Bytes) Time
- 35ms Typical 4-Kbyte Block Erase Time
- 250ms Typical 32-Kbyte Block Erase Time
- Automatic Checking and Reporting of Erase/Program Failures
- S
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 6 ns | ||
| 16 Bit | ||
| Sectored | ||
| Symmetrical | ||
| No | ||
| 104 MHz | ||
| 512 Kb | ||
| No | ||
| No | ||
| Serial (SPI) | ||
| Gold over Nickel Palladium | ||
| 260 | ||
| 2/Chip s | ||
| 15 mA | ||
| 5/Page ms | ||
| 7 ns | ||
| 512 Kb | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 8 | ||
| 1 Bit | ||
| 512 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 8SOIC N | ||
| 8 | ||
| 5.05(Max) x 3.99(Max) x 1.5(Max) | ||
| 12 mA | ||
| 2.3 to 3.6 V | ||
| No | ||
| Industrial | ||
| No | ||
| SOIC N | ||
| 3.6 V | ||
| 2.3 V | ||
| 3 V | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320051 |
| Schedule B: | 8542320050 |
Factory Lead Time: