70T3519S133BCI

The IDT70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T3519 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

• True Dual-Port memory cells which allow simultaneous access of the same memory location
• High-speed data access
  • Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.)
  • Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
• Selectable Pipelined or Flow-Through output mode
• Counter enable and repeat features
• Dual chip enables allow for depth expansion without additional logic
• Full synchronous operation on both ports - 5ns cycle time, 200MHz operation (14Gbps bandwidth)
  • Fast 3.4ns clock to data out
  • Data input, address, byte enable and control registers
  • 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 200MHz
  • Self-timed write allows fast cycle time
• Interrupt and Collision Detection Flags
• Separate byte controls for multiplexed bus and bus matching compatibility
• Dual Cycle Deselect (DCD) for Pipelined Output Mode
• 2.5V (