TIP121G

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications.

• High DC Current Gain -hFE = 2500 (typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage @ 100 mA
  V_CEO(sus) = 80 Vdc (Min)
• Low Collector-Emitter Saturation Voltage
  V_CE(sat) = 2.0 Vdc(Max) @ I_C= 3.0 Adc
  = 4.0 Vdc(Max) @ I_C= 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• Compact TO-220 AB Package
• Pb-Free Packages are Available