SNSS35200MR6T1G
30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor. ONSSPCTRNSTRN4B6U;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: SNSS35200MR6T1G
Secondary Manufacturer Part#: SNSS35200MR6T1G
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RoHS 10 Compliant -
Tariff Charges
Low V Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage V and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
- High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Technical Attributes
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| Description | Value | |
|---|---|---|
| 35 | ||
| 100 | ||
| 6 | ||
| 150 °C | ||
| 1 | ||
| AEC-Q101 | ||
| TSOP | ||
| Surface Mount | ||
| PNP | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |
Factory Lead Time: