PCNVG800A75L4DSB

PCNVG800A75L4DSB is a VE-Trac™ dual side cooling half-bridge power module. It is a power modules with dual side cooling and compact footprints for hybrid (HEV) and electric vehicle (EV) traction inverter application. The module consists of two narrow mesa field stop (FS4) IGBTs in a half bridge configuration. The chipset utilizes the new narrow mesa IGBT technology in providing high current density and robust short circuit protection with higher blocking voltage to deliver outstanding performance in EV traction applications. It is used in applications such as hybrid and electric vehicle traction inverter, high power DC-DC converter.

• Tvj max = 175°C for continuous operation, ultra low stray inductance
• Dual side cooling, integrated chip level temperature and current sensor
• Low VCESAT and switching losses, automotive grade FS4 IGBT & soft diode chip technologies
• 4.2KV isolated DBC substrate, collector to emitter saturation voltage is 1.30V typical
• Threshold voltage is 5.5V typ at VCE= VGE, IC = 500mA, Tvj = 25°C
• Total gate charge is 2.2µC typ at (VGE= -8 to 15V, VCE = 400V, Tvj = 25°C)
• 1.30V typical collector to emitter saturation voltage (terminal) at VGE = 15V, IC = 600A, TvJ = 25°C
• Gate-emitter leakage current is ±400nA max at VCE = 0, VGE = ±20V, Tvj = 25°C
• Diode forward voltage is 1.50V typ at (VGE = 0V, IC = 600A, TvJ = 25°C)
• Operating junction temperature range from -40°C to 175°C