NVMYS1D3N04CTWG
Power MOSFET, Single N-Channel, 40 V, 1.15O, 252 A
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![NVMYS1D3N04CTWG]()
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NVMYS1D3N04CTWG
Secondary Manufacturer Part#: NVMYS1D3N04CTWG
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RoHS 10 Compliant -
Tariff Charges
- Single N-channel power MOSFET
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- 40V minimum drain to source breakdown voltage (VGS = 0V, ID = 250A)
- 100nA maximum gate to source leakage current (VDS = 0V, VGS = 20V)
- 2.5 to 3.5V gate threshold voltage range (VGS = VDS, ID = 180µA)
- 15ns typical turn on delay time (GS = 10V, VDS = 32V, ID = 50A, RG = 2.5ohm)
- 22ns typical rise time (GS = 10V, VDS = 32V, ID = 50A, RG = 2.5ohm)
- LFPAK4 package, operating junction and storage temperature range from -55 to +175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 252 | ||
| 1.15 | ||
| 40 | ||
| 3.5 | ||
| 5 | ||
| 175 °C | ||
| 134 | ||
| AEC-Q101 | ||
| LFPAK | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: