NVHL080N120SC1
Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-3
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules
Avnet Manufacturer Part #: NVHL080N120SC1
Secondary Manufacturer Part#: NVHL080N120SC1
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RoHS 10 Compliant -
Tariff Charges
NVHL080N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% UIL tested
- Low effective output capacitance (typ. Coss= 80pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current RJC is 31A at TC = 25°C
- Power dissipation RJC is 89W at TC = 100°C
- Single pulse surge drain current capability is 132A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- TO247-3L package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 31 | ||
| 110 | ||
| 1.2 | ||
| 4.3 | ||
| 3 | ||
| 175 °C | ||
| 178 | ||
| TO-247LL |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: