NTMTS1D6N10MCTXG

100V, 273A, 1.7mohm single N-channel power MOSFET, This N-channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. Typical applications include motor control, DC-DC converters, battery management/protection, power tools, E-scooters, drones, battery packs/ energy storage units, telecom, netcom and power supplies.

• Very low RDS(on), shielded gate trench technology minimize conduction losses
• Low profile PQFN 8x8 package, small footprint (8x8 mm) for compact design
• Maximum junction temperature of 175°C
• Soft body diode with low Qrr, reduces switching spike
• High peak current and low parasitic inductance
• Offers a wider design margin for thermally challenged applications
• Low QG and capacitance to minimize driver losses