NTMFS10N7D2C
Power MOSFET, Single N-Channel Standard Gate, 100 V, 78 A, 7.2 mO
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![NTMFS10N7D2C]()
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NTMFS10N7D2C
Secondary Manufacturer Part#: NTMFS10N7D2C
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RoHS 10 Compliant -
Tariff Charges
NTMFS10N7D2C is a power trench, N-channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive and solar.
- Lowers switching noise/EMI
- 100% UIL tested
- Drain to source voltage is 100V (TA = 25°C)
- 50% lower Qrr than other MOSFET suppliers
- Gate to source voltage is ±20V (TA = 25°C)
- Drain current is 78A (continuous, TC = 25°C)
- Single pulse avalanche energy is 216mJ (TC = 25°C)
- Power dissipation is 83W (TC = 25°C)
- Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
- PQFN8 package, operating and storage junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 78 | ||
| 7.2 | ||
| 100 | ||
| 4 | ||
| 5 | ||
| 150 °C | ||
| 83 | ||
| PQFN | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: