NTJS4151PT1G
Power MOSFET, P Channel, 20 V, 4.2 A, 0.06 ohm, SOT-363, Surface Mount
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NTJS4151PT1G
Secondary Manufacturer Part#: 09R9658
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RoHS 10 Compliant -
Tariff Charges
The NTJS4151PT1G is a P-channel single Trench Power MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use as high side load switches, cell phones, computing, digital cameras, MP3s and PDAs.
- Leading Trench technology for low RDS (ON) extending battery life
- Small outline (2 x 2 mm) for maximum circuit board utilization
- Gate diodes for ESD protection
- -55 to 150°C Operating junction temperature range
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 3.3 A | ||
| 60 mOhm | ||
| 20 V | ||
| 1.2 V | ||
| 6 | ||
| 150 °C | ||
| 1 W | ||
| PowerTrench NTJS4151P Series | ||
| SOT-363 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: