NTF2955T1G
Single P-Channel Power MOSFET -60V, -2.6A, 170mO
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NTF2955T1G
Secondary Manufacturer Part#: 10N9718
- RoHS 10 Compliant
- Tariff Charges
NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management.
- Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A)
- Gate-to-source voltage is ±20V (TJ = 25°C)
- Continuous drain current is -2.6A (TJ = 25°C, steady state)
- Power dissipation is 2.3W (TJ = 25°C, steady state)
- Pulsed drain current is -17A (tp = 10µs, TJ = 25°C)
- Drain-to-source breakdown voltage is -60V min (VGS = 0V, ID = -250µA, TJ=25°C)
- Gate threshold voltage range from -2.0 to -4.0V (VGS = VDS, ID = -1.0mA, TJ=25°C)
- Forward transconductance is 1.77S typ (VGS = -15V, ID = -0.75A, TJ=25°C)
- Turn-on delay time is 11ns rtp (VGS = 10V, VDD = 25V, ID = 1.5A, RG = 9.1ohm, RL = 25ohm)
- SOT-223 package, operating junction range from -55 to 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 2.6 A | ||
| 154 mOhm | ||
| 60 V | ||
| 4 V | ||
| 4 | ||
| 175 °C | ||
| 2.3 W | ||
| AEC-Q101 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290040 |