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NTF2955T1G

Single P-Channel Power MOSFET -60V, -2.6A, 170mO

Manufacturer:onsemi
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NTF2955T1G
Secondary Manufacturer Part#: 10N9718
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

NTF2955T1G is a single, P-channel power MOSFET. The applications include power supplies, PWM motor control, converters, and power management.

  • Drain-to-source on resistance is 145mohm typ (VGS = -10V, ID = -0.75A)
  • Gate-to-source voltage is ±20V (TJ = 25°C)
  • Continuous drain current is -2.6A (TJ = 25°C, steady state)
  • Power dissipation is 2.3W (TJ = 25°C, steady state)
  • Pulsed drain current is -17A (tp = 10µs, TJ = 25°C)
  • Drain-to-source breakdown voltage is -60V min (VGS = 0V, ID = -250µA, TJ=25°C)
  • Gate threshold voltage range from -2.0 to -4.0V (VGS = VDS, ID = -1.0mA, TJ=25°C)
  • Forward transconductance is 1.77S typ (VGS = -15V, ID = -0.75A, TJ=25°C)
  • Turn-on delay time is 11ns rtp (VGS = 10V, VDD = 25V, ID = 1.5A, RG = 9.1ohm, RL = 25ohm)
  • SOT-223 package, operating junction range from -55 to 175°C

Technical Attributes

Find Similar Parts

Description Value
P Channel
2.6 A
154 mOhm
60 V
4 V
4
175 °C
2.3 W
AEC-Q101
SOT-223
Surface Mount

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290040
Schedule B: 8541290040
In Stock :  0
Additional inventory
Factory Lead Time: 106 Weeks
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