NSVBAT54SWT1G
200 mA, 30 V, Schottky Diode, Dual Series. ONSSPCDDEBO6N2V;
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Manufacturer:onsemi
Product Category:
Discretes, Diodes & Rectifiers, Small Signal Schottky Diodes
Avnet Manufacturer Part #: NSVBAT54SWT1G
Secondary Manufacturer Part#: NSVBAT54SWT1G
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RoHS 10 Compliant -
Tariff Charges
NSVBAT54SWT1G is a dual series schottky barrier diode. It is designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand-held and portable applications where space is limited.
- Extremely fast switching speed, AEC-Q101 Qualified and PPAP Capable
- Forward voltage is 0.35V typ (IF = 10mA, TA = 25°C)
- Reverse voltage is 30V (TJ = 125°C), total power dissipation is 200mW at TA = 25°C
- Forward current (DC) is 200mA, non-repetitive peak forward current tp 10 msec is 600mA
- Repetitive peak forward current is 300mA (Pulse Wave = 1 sec, Duty Cycle = 66%)
- Reverse leakage is 0.5µA typ (VR = 25V, TA = 25°C)
- Total capacitance is 7.6pF typ (VR = 1.0V, f = 1.0MHz, TA = 25°C)
- Reverse recovery time is 5.0ns (IF = IR = 10mAdc, IR(REC) = 1.0mAdc, TA = 25°C)
- Reverse breakdown voltage is 30V min (IR = 10A, TA = 25°C)
- SOT-323 package, junction temperature range from -55 to 125°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 200 mA | ||
| SOT-323 | ||
| Dual Series | ||
| Surface Mount | ||
| 600 A | ||
| 800 V | ||
| 3 | ||
| 125 °C | ||
| BAT54SW Series | ||
| AEC-Q101 | ||
| 30 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100070 |
| Schedule B: | 8541100070 |
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