NSV9435T1G

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.

• Collector-Emitter Sustaining Voltage - V_CEO(sus) = 30 Vdc (Min) @ I_C = 10 mAdc
• High DC Current Gain -h_FE = 125 (Min) @ I_C = 0.8 Adc
  = 90 (Min) @ I_C = 3.0 Adc
• Low Collector-Emitter Saturation Voltage - V_CE(sat) = 0.275 Vdc (Max) @ I_C = 1.2 Adc
  = 0.55 Vdc (Max) @ I_C = 3.0 Adc
• SOT-223 Surface Mount Packaging
• ESD Rating - Human Body Model: Class 1B
  - Machine Model: Class B
• Pb-Free Package is Available
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
  Qualified and PPAP Capable