NSS40301MDR2G
Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A. ONSSPCTRNSTRN4B6U;
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RoHS 10 Compliant -
Tariff Charges
ON Semiconductor e2 PowerEdge family of Low V Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
- Current Gain Matching to 10%
- Base Emitter Voltage Matched to 2 mV
- This is a Pb-Free Device
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
Technical Attributes
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| Description | Value | |
|---|---|---|
| 40 | ||
| 200 | ||
| 8 | ||
| 150 °C | ||
| SOIC | ||
| Surface Mount | ||
| Dual NPN | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: