NLV14012BDR2G
Dual 4-Input NAND Gates. ONSSPCLGC;
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Manufacturer:onsemi
Product Category:
Logic ICs, Gates & Inverters
Avnet Manufacturer Part #: NLV14012BDR2G
Secondary Manufacturer Part#: NLV14012BDR2G
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RoHS 10 Compliant -
Tariff Charges
NLV14012BDR2G is a dual 4-input NAND gate. It is constructed with P-channel and N-channel enhancement mode devices in a single monolithic structure (complementary MOS). Its primary use is where low power dissipation and/or high noise immunity is desired. It is capable of driving two low-power TTL loads or one low-power Schottky TTL load over the rated temperature range.
- Supply voltage range from 3.0VDC to 18VDC
- All outputs buffered, double diode protection on all inputs
- AEC-Q100 qualified and PPAP capable
- Ambient temperature range from -55 to +125°C
- Input or output current (DC or transient) per pin is ±10mA
- SOIC-14 package
- Quiescent current is 0.25µAdc maximum at -55°C
- Output rise time is 100ns typical at tTLH = (1.35ns/pF) CL + 33ns, CL = 50pF, TA = 25°C
- Propagation delay time is 160ns typ at PLH, tPHL = (0.90ns/pF) CL + 115ns, CL = 50pF, TA = 25°C
- Input capacitance is 5pF typ at 25°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Tin | ||
| NAND | ||
| 260 °C | ||
| -8.8 mA | ||
| 8.8 mA | ||
| 300@5V ns | ||
| 1 uA | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 4 | ||
| 2 | ||
| 0 | ||
| 0 | ||
| 3 to 18 V | ||
| -55 to 125 °C | ||
| DC | ||
| 14SOIC | ||
| 14 | ||
| 8.75 x 4 x 1.5 mm | ||
| No | ||
| Automotive | ||
| SOIC | ||
| 0.0015 uA |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: