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NJVMJD122T4G

8.0 A, 100 V NPN Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;

Manufacturer:onsemi
Avnet Manufacturer Part #: NJVMJD122T4G
Secondary Manufacturer Part#: NJVMJD122T4G
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1"" Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel (""T4"" Suffix)
  • Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc
  • Complementary Pairs Simplifies Designs
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Packages are Available
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Technical Attributes

Find Similar Parts

Description Value
100
8
1000
3
150 °C
20
AEC-Q101
TO-252 (DPAK)
Surface Mount
NPN

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290095
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 189 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $:
2500+
$0.31973
5000+
$0.31132
10000+
$0.30727
20000+
$0.30333
40000+
$0.2921