NJVMJD122T4G
8.0 A, 100 V NPN Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
- RoHS 10 Compliant
- Tariff Charges
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1"" Suffix)
- Lead Formed Version Available in 16 mm Tape and Reel (""T4"" Suffix)
- Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 100 | ||
| 8 | ||
| 1000 | ||
| 3 | ||
| 150 °C | ||
| 20 | ||
| AEC-Q101 | ||
| TO-252 (DPAK) | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |